| 一种应用于2.2GHz的射频功率放大器设计 |
投稿时间：2021-01-11 修订日期：2021-01-18  点此下载全文 |
| 引用本文： |
| 摘要点击次数: 159 |
| 全文下载次数: 0 |
|
|
| 中文摘要:采用Cree公司提供的CGH40010F GaN高电子迁移率晶体管(HEMT)作为有源器件,设计了一款工作在2.2GHz的射频功率放大器。利用ADS软件对功率管的偏置电路进行设计的仿真,利用阶跃式匹配方法扩展了带宽,通过对功率管寄生参数的仿真,有效地提高了功率附加效率(PAE)。仿真结果表明,在2.1GHz-2.3GHz的频率范围内,小信号S21增益为12.03dB-12.77dB,大信号输出功率为40.17dBm,功率附加效率达到61.3%。达到设计指标的要求。 |
| 中文关键词:功率放大器 GaN高电子迁移率晶体管 高效率 寄生参数仿真 阶跃式匹配 |
| |
| Design of a RF Power Amplifier Applied to 2.2GHz |
|
|
| Abstract:CGH40010F GaN High Electron Mobility Transistor(HEMT) provided by Cree company is used as active device, and a RF power amplifier working at 2.2GHz is designed. ADS software is used to design and simulate the bias circuit of power tube.The bandwidth is expanded by using the step matching method and the parasitic parameters of power tube are simulated to effectively improve the power added efficiency (PAE). Simulation results show that in the frequency range of 2.1GHz~2.3GHz, the gain of small signal S21 is 12.03dB~12.77dB, the output power of large signal is 40.17dBm, and the power added efficiency reaches 61.3% which meet the requirements of design indicators. |
| keywords:Power Amplifier GaN High Electron Mobility Transistor High Efficiency Parasitic parameter simulation Step matching method |
| 查看全文 查看/发表评论 下载pdf阅读器 |
